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RQ1C075UNTR
Manufacturer
ROHMManufacturer Product Number
RQ1C075UNTR
Description
FET类型：N-Channel 漏源极电压Vds：20V 连续漏极电流Id：7.5A(Ta) 栅极电压Vgs：±10V Pd-功率耗散(Max)：700mW(Ta)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-Channel |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 7.5 A |
| Operating Temperature | 150℃ |
| Power | 700mW |
| On-Resistance | 16mΩ@7.5A,4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,897
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3440 | |
| 10+ | $ 0.3022 | |
| 30+ | $ 0.2827 | |
| 100+ | $ 0.2618 | |
| 500+ | $ 0.2493 | |
| 1000+ | $ 0.2437 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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栅极电压Vgs：±20V Pd-功率耗散(Max)：700mW(Ta) Rds On(Max)@Id,Vgs：31mΩ@5A,10V 工作温度：150°C(TJ) 封装/外壳：TSMT
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RQ1E050RPTR
原装正品，假一罚十
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RQ1E070RPTR
栅极电压Vgs：±20V Pd-功率耗散(Max)：550mW(Ta) Rds On(Max)@Id,Vgs：17mΩ@7A,10V 工作温度：150°C(TJ) 封装/外壳：TSMT
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