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QS8M51HZGTR
Manufacturer
ROHMManufacturer Product Number
QS8M51HZGTR
Description
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Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 2A |
| Input Capacitance | 20pF |
| Drain-Source On-Resistance | 0.355Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,300
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.7938 | |
| 100+ | $ 0.6127 | |
| 1000+ | $ 0.4944 | |
| 6000+ | $ 0.3843 | |
| 15000+ | $ 0.3300 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllQS8M51TR
封装/外壳：TSMT-8 FET类型：N+P-Channel Pd-功率耗散(Max)：1.5W Rds On(Max)@Id,Vgs：325mΩ@2A,10V 工作温度：150°C（TJ）
ROHM
QS8M51TR
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XP Power QSB100 系列 100W 隔离式直流-直流转换器 QSB10048S05, 18 → 75 V 直流输入, 5V dc输出
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XP Power
