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QS8M51TR
Manufacturer
ROHMManufacturer Product Number
QS8M51TR
Description
封装/外壳：TSMT-8 FET类型：N+P-Channel Pd-功率耗散(Max)：1.5W Rds On(Max)@Id,Vgs：325mΩ@2A,10V 工作温度：150°C（TJ）
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 2A |
| Drain-Source On-Resistance | 0.355Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 16
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7464 | |
| 10+ | $ 0.6030 | |
| 30+ | $ 0.5306 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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