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NTS4173PT1G

Manufacturer

Onsemi

Manufacturer Product Number

NTS4173PT1G

Description

类型:P沟道 漏源电压(Vdss):30V 连续漏极电流(Id):1.2A 功率(Pd):290mW 导通电阻(RDS(on)@Vgs,Id):150mΩ@1.2A,10V 单 P 沟道,功率 MOSFET,-30V,-1.3A,150mΩ 这是一个 30 V P 沟道功率 MOSFET

Manufacturer Standard Lead Time

10-15

Detailed Description

类型:P沟道 漏源电压(Vdss):30V 连续漏极电流(Id):1.2A 功率(Pd):290mW 导通电阻(RDS(on)@Vgs,Id):150mΩ@1.2A,10V 单 P 沟道,功率 MOSFET,-30V,-1.3A,150mΩ 这是一个 30 V P 沟道功率 MOSFET

Datasheet

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Type P-channel
Operating Temperature -55℃~150℃
Drain-Source Voltage 30V
Threshold Voltage 1.5V@250µA
Input Capacitance 430 pF @ 15 V
Continuous Drain Current 1.2A
Power 290mW
Gate Charge 10.1nC @ 10V
On-Resistance 150mΩ @ 1.2A, 10V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 1,311

Quantity Unit Price Ext Price
1+ $ 0.3648
10+ $ 0.1337
50+ $ 0.1170
100+ $ 0.1100
500+ $ 0.0975
1000+ $ 0.0919
3000+ $ 0.0836
6000+ $ 0.0794
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