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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTS2101PT1G

Manufacturer

Onsemi

Manufacturer Product Number

NTS2101PT1G

Description

--

Manufacturer Standard Lead Time

5-7个

Detailed Description

--

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Drain-Source On-Resistance	0.1Ω
Gate-Source Breakdown Voltage	8V
Drain-Source Saturation Current	1.4 A

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 70,590

Quantity	Unit Price	Ext Price
10+	$ 0.0696
100+	$ 0.0557
300+	$ 0.0487
3000+	$ 0.0362
6000+	$ 0.0334
9000+	$ 0.0306

Price For：Each

Minimum:1/Multiple:1

Total amount:

Associated Product

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NTS2101PT1G-MS

SOT-323

MSKSEMI

NTS2101PT1G-VB

--

Vbsemi

NTS4001NT1G

类型：N沟道漏源电压(Vdss)：30V连续漏极电流(Id)：300mA功率(Pd)：313mW导通电阻(RDS(on)@Vgs,Id)：1.5Ω@10V,阈值电压(Vgs(th)@Id)：08V-1.6V@250uA单N沟道小信号MOSFET30V

MSKSEMI

NTS4001NT1G

N-Channel 30 V 1 Ohm 330 mW Surface Mount Small Signal MOSFET - SOT-323

Onsemi