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NTS2101PT1G
Manufacturer
OnsemiManufacturer Product Number
NTS2101PT1G
Description
P-Channel 8 V 65 mOhm 0.29 W Surface Mount Power MOSFET - SOT-323
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source On-Resistance | 0.1Ω |
| Gate-Source Breakdown Voltage | 8V |
| Drain-Source Saturation Current | 1.4 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
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Associated Product
See All
NTS2101PT1G-MS
SOT-323
MSKSEMI
NTS2101PT1G-VB
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Vbsemi
NTS4001NT1G
类型：N沟道漏源电压(Vdss)：30V连续漏极电流(Id)：300mA功率(Pd)：313mW导通电阻(RDS(on)@Vgs,Id)：1.5Ω@10V,阈值电压(Vgs(th)@Id)：08V-1.6V@250uA单N沟道小信号MOSFET30V
MSKSEMI
NTS4001NT1G
N-Channel 30 V 1 Ohm 330 mW Surface Mount Small Signal MOSFET - SOT-323
Onsemi
