Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MJD122G
Manufacturer
OnsemiManufacturer Product Number
MJD122G
Description
Transistors Darlington 8A 100V Bipolar Power NPN
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Power | 20W |
| Ji She Ji Ji Chuan Voltage（vceo） | 100V |
| Operating Temperature | 65℃~150℃ |
| Ji Dian Ji Current（ic） | 8A |
| Ji Dian Ji Jie Zhi Current（icbo） | 10µA |
| DC Gain (hFE@Ic, Vce) | 1000@4A, 4V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 4V@80mA, 8A |
| Te Zheng Frequency | 4MHz |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 238
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2157 | |
| 10+ | $ 1.0542 | |
| 25+ | $ 0.8536 | |
| 50+ | $ 0.6531 | |
| 75+ | $ 0.6392 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllMJD122T4
达林顿管 20W 100V 1000@4V,4A NPN TO-252-2(DPAK)
ST
MJD122T4
Trans Darlington NPN 100V 8A 3-Pin(2+Tab) TO-252 T/R
ST
MJD122T4G
NPN,Vceo=100V,Ic=16A
Onsemi
MJD122T4G
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
Onsemi