Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MJD122T4G
Manufacturer
OnsemiManufacturer Product Number
MJD122T4G
Description
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Ji She Ji Ji Chuan Voltage（vceo） | 100V |
| Operating Temperature | 65℃~150℃ |
| Ji Dian Ji Current（ic） | 8A |
| Ji Dian Ji Jie Zhi Current（icbo） | 10µA |
| DC Gain (hFE@Ic, Vce) | 1000@4A, 4V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 4V@80mA, 8A |
| Te Zheng Frequency | 4MHz |
| Power | 1.75W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10,997
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.0737 | |
| 50+ | $ 0.9065 | |
| 100+ | $ 0.7380 | |
| 500+ | $ 0.6099 | |
| 1000+ | $ 0.5431 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
MJD122T4G(MS)
此款MJD122T4G,类型：NPN型，集射极击穿电压(Vceo)：100V,集电极电流(Ic)：8A，采用表面贴装TO-252(DPAK),MJD122达林顿晶体管适用于各种需要大电流驱动的应用场景，如电源开关、电机驱动、LED驱动、音频放大器以及各类功率控制电路。
MSKSEMI
MJD127
--
YFW
MJD127
达林顿管 MJD127 TO-252(DPAK)
JSCJ
MJD127(MS)
此款MJD127,类型：PNP型，集射极击穿电压(Vceo)：100V,集电极电流(Ic):8A,采用表面贴装TO-252(DPAK),由于其稳定的电流驱动能力，MJD127适用于多种功率驱动场合，包括电机控制、电源开关、LED驱动、以及其他需要大电流开关和/或线性放大功能的电子设备。
MSKSEMI