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FQD2N100TM
Manufacturer
OnsemiManufacturer Product Number
FQD2N100TM
Description
场效应管(MOSFET) 2.5W；50W 1kV 1.6A 1个N沟道 TO-252AA
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 5V@250µA |
| Continuous Drain Current | 1.6A |
| Drain-Source Voltage | 1000 V |
| Power | 2.5W, 50W |
| Input Capacitance | 520pF @ 25V |
| Gate Charge | 15.5nC @ 10V |
| On-Resistance | 9Ω@800mA, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,385
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8592 | |
| 100+ | $ 0.7116 | |
| 1250+ | $ 0.6406 | |
| 2500+ | $ 0.6127 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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