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FQD2N60CTM
Manufacturer
OnsemiManufacturer Product Number
FQD2N60CTM
Description
场效应管(MOSFET) 2.5W 600V 1.9A 1个N沟道 TO-252(DPAK)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 600V |
| Power | 2.5W |
| Threshold Voltage | 4V@250μA |
| Continuous Drain Current | 1.9A |
| On-Resistance | 4.7Ω @ 10V, 950mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7798 | |
| 100+ | $ 0.6447 | |
| 1250+ | $ 0.5849 | |
| 2500+ | $ 0.5570 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFQD2N90TM
功率 MOSFET，N 沟道，QFET®，900 V，1.7 A，7.2 Ω，DPAK
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原装正品
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Onsemi
