Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
FQD1N60CTM
Manufacturer
OnsemiManufacturer Product Number
FQD1N60CTM
Description
原装正品，工厂库存
Manufacturer Standard Lead Time
8-12
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Type | N-Channel |
| Threshold Voltage | 4V @ 250µA |
| Continuous Drain Current | 1A (Tc) |
| Power | 2.5 W (Ta), 28 W (Tc) |
| Gate Charge | 6.2 nC @ 10 V |
| Drain-Source Voltage | 600 V |
| On-Resistance | 11.5 Ohm @ 500 mA, 10 V |
| Input Capacitance | 170 pF @ 25 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
FQD20N06-HXY
--
HUAXUANYANG
FQD20N06-VB
--
Vbsemi
FQD20N06TM
Trans MOSFET N-CH 60V 16.8A 3-Pin(2+Tab) DPAK T/R
Onsemi
FQD2N100TM
场效应管(MOSFET) 2.5W；50W 1kV 1.6A 1个N沟道 TO-252AA
Onsemi
