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FQD19N10LTM
Manufacturer
OnsemiManufacturer Product Number
FQD19N10LTM
Description
场效应管(MOSFET) 2.5W；50W 100V 15.6A 1个N沟道 TO-252
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Drain-Source Voltage | 100 V |
| Power | 2.5W, 50W |
| Input Capacitance | 870pF@25V |
| Continuous Drain Current | 15.6 A |
| Gate Charge | 18 nC @ 5 V |
| On-Resistance | 100 mΩ @ 7.8 A, 10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,221
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0068 | |
| 100+ | $ 0.8327 | |
| 1250+ | $ 0.7562 | |
| 2500+ | $ 0.7186 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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