Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
FDD86102
Manufacturer
OnsemiManufacturer Product Number
FDD86102
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Gate Charge | 19 nC @ 10 V |
| Power | 3.1W, 62W |
| Input Capacitance | 1035pF@50V |
| Continuous Drain Current | 8A, 36A |
| On-Resistance | 24mΩ@8A，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 376
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8160 | |
| 10+ | $ 0.6615 | |
| 30+ | $ 0.5849 | |
| 100+ | $ 0.5083 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFDD86102LZ
场效应管(MOSFET) 3.1W；54W 100V 8A；35A 1个N沟道 TO-252AA
Onsemi
FDD86102LZ
N沟道,100V,35A,22.5mΩ@10V
Onsemi
FDD86102LZ
FDD86102LZ Series 100 V 8 A 22.5 mOhm N-Ch Shielded Gate PowerTrench Mosfet
Onsemi
FDD86102LZ
--
Onsemi