Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
FDD86102LZ
Manufacturer
OnsemiManufacturer Product Number
FDD86102LZ
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Threshold Voltage | 3V @ 250μA |
| Drain-Source Voltage | 100 V |
| Gate Charge | 26nC@10V |
| Continuous Drain Current | 8A, 35A |
| Power | 3.1W, 54W |
| On-Resistance | 22.5mΩ@10V, 8A |
| Input Capacitance | 1.54nF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,600
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7840 | |
| 10+ | $ 0.6308 | |
| 30+ | $ 0.5514 | |
| 100+ | $ 0.4763 | |
| 500+ | $ 0.4024 | |
| 1000+ | $ 0.3788 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFDD86110
场效应管(MOSFET) 3.1W；127W 100V 12.5A；50A 1个N沟道 DPAK(TO-252)
Onsemi
FDD86110
N-Channel 100 V 10.2 mOhm Shielded Gate PowerTrench� Mosfet - DPAK-3
Onsemi
FDD86110
原装正品，上海工厂库存
Onsemi
FDD86110
--
Onsemi