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2N7000
Manufacturer
OnsemiManufacturer Product Number
2N7000
Description
MOS管 N-Channel VDS=60V VGS=±20V ID=200mA RDS(ON)=5Ω@10V TO92
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.4W |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 5 pF |
| Drain-Source Saturation Current | 0.2A |
| Drain-Source On-Resistance | 5Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,437
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5473 | |
| 5+ | $ 0.3983 | |
| 10+ | $ 0.3217 | |
| 25+ | $ 0.2381 | |
| 100+ | $ 0.1782 | |
| 200+ | $ 0.1727 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All2N7000-D26Z
场效应管(MOSFET) 400mW 60V 200mA 1个N沟道 TO-92-3
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2N7000-D26Z
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N沟道增强模式场效应晶体管60V，200mA，5Ω
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