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2N7000-D26Z
Manufacturer
OnsemiManufacturer Product Number
2N7000-D26Z
Description
场效应管(MOSFET) 400mW 60V 200mA 1个N沟道 TO-92-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.4W |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 5 pF |
| Drain-Source Saturation Current | 0.2A |
| Drain-Source On-Resistance | 5Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,750
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2715 | |
| 50+ | $ 0.2075 | |
| 2000+ | $ 0.1908 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All2N7000-D74Z
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2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92
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Transistor: N-MOSFET
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