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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

LP2305DSLT1G

Manufacturer

LRC

Manufacturer Product Number

LP2305DSLT1G

Description

mos场效应晶体管,8v,3.5a,p-ch,sot23

Manufacturer Standard Lead Time

3-5

Detailed Description

mos场效应晶体管,8v,3.5a,p-ch,sot23

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	P-Channel
Power	1.1W
Drain-Source Voltage	-12V
Continuous Drain Current	-4A
On-Resistance	68mΩ @ -3.5A, -4.5V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 79

Quantity	Unit Price	Ext Price
1+	$ 0.0460

Price For：Each

Minimum:1/Multiple:1

Total amount:

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LP2305LT1G

连续漏极电流Id：4.2A 封装/外壳：SOT-23 漏源极电压Vds：30V 栅极电压Vgs：0.7V Rds On(Max)@Id,Vgs：130

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LP2305LT1G

MOSFET场效应管,SOT23,30V

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LP2307LT1G

漏源极电压Vds：16V 栅极电压Vgs：0.6V Rds On(Max)@Id,Vgs：70 FET类型：P-Channel 封装/外壳：SOT23

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LP2307LT1G

漏源极电压Vds：16V 栅极电压Vgs：0.6V Rds On(Max)@Id,Vgs：70 FET类型：P-Channel 封装/外壳：SOT23

LRC