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LP2305LT1G
Manufacturer
LRCManufacturer Product Number
LP2305LT1G
Description
MOSFET场效应管,SOT23,30V
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 30V |
| Type | P-Channel |
| Continuous Drain Current | 4.2A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 500
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0627 | |
| 10+ | $ 0.0557 | |
| 100+ | $ 0.0487 | |
| 1000+ | $ 0.0432 | |
| 3000+ | $ 0.0390 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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漏源极电压Vds：16V 栅极电压Vgs：0.6V Rds On(Max)@Id,Vgs：70 FET类型：P-Channel 封装/外壳：SOT23
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LP2307LT1G
漏源极电压Vds：16V 栅极电压Vgs：0.6V Rds On(Max)@Id,Vgs：70 FET类型：P-Channel 封装/外壳：SOT23
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LP2309LT1G
mos场效应晶体管,p-ch,60v,1.9a,sot2
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封装/外壳：SOT-23 FET类型：P-Channel Pd-功率耗散(Max)：1.4W Rds On(Max)@Id,Vgs：215mΩ@-1.8A,-10V 工作温度：-55°C~150°C
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