Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IRFH8318TR2PBF
Manufacturer
InfineonManufacturer Product Number
IRFH8318TR2PBF
Description
Infineon HEXFET 系列 N沟道 MOSFET 晶体管 IRFH8318TR2PBF, 120 A, Vds=30 V, 8引脚 PQFN封装
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Gate Charge | 41nC @ 10V |
| Threshold Voltage | 2.35V@50µA |
| On-Resistance | 3.1mΩ@20A, 10V |
| Input Capacitance | 3180pF@10V |
| Continuous Drain Current | 27A,120A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.9175 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IRFH8318TRPBF
场效应管(MOSFET) 3.6W 30V 27A 1个N沟道 PQFN-8(4.9x5.8)
Infineon
IRFH8318TRPBF
MOSFET N-CH 30V 50A 5X6 PQFN
Infineon
IRFH8324TR2PBF
MOSFET N-CH 30V 23A/90A PQFN
Infineon
IRFH8324TRPBF
晶体管: N-MOSFET; 单极; 30V; 23A; 3.6W; PQFN5X6; 系列: HEXFET®
Infineon
