Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IRFH8324TR2PBF
Manufacturer
InfineonManufacturer Product Number
IRFH8324TR2PBF
Description
MOSFET N-CH 30V 23A/90A PQFN
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Gate Charge | 31 nC @ 10 V |
| Power | 3.6W, 54W |
| Threshold Voltage | 2.35V@50µA |
| Continuous Drain Current | 23A, 90A |
| On-Resistance | 4.1mΩ@20A, 10V |
| Input Capacitance | 2380pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 25
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6336 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIRFH8324TRPBF
晶体管: N-MOSFET; 单极; 30V; 23A; 3.6W; PQFN5X6; 系列: HEXFET®
Infineon
IRFH8325TRPBF
晶体管: N-MOSFET; 单极; 30V; 21A; 3.6W; PQFN5X6; 系列: HEXFET®
Infineon
IRFH8330TRPBF
晶体管: N-MOSFET; 单极; 30V; 17A; 3.3W; PQFN5X6; 系列: HEXFET®
Infineon
IRFH8330TRPBF
--
Infineon
