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IPW60R190C6FKSA1
Manufacturer
InfineonManufacturer Product Number
IPW60R190C6FKSA1
Description
晶体管: N-MOSFET; 单极; 600V; 20.2A; 151W; PG-TO247; CoolMOS™ C6
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Gate Charge | 63nC@10V |
| Continuous Drain Current | 20.2 A |
| Power | 151 W |
| On-Resistance | 190mΩ @ 9.5A, 10V |
| Threshold Voltage | 3.5V @ 630µA |
| Input Capacitance | 1400pF @ 100V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 5.6830 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPW60R190E6FKSA1
晶体管: N-MOSFET; 单极; 600V; 20.2A; 151W; PG-TO247; CoolMOS™ E6
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IPW60R190P6
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IPW60R190P6
DISCRETE_MOSFET_POWER MOSFET
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IPW60R190P6FKSA1
N-Channel 600 V 20.2 A 190 mO 37 nC CoolMOS P6 Power Transistor - TO-247
Infineon
