Manufacturer
InfineonManufacturer Product Number
IPW60R190E6FKSA1
Description
晶体管: N-MOSFET; 单极; 600V; 20.2A; 151W; PG-TO247; CoolMOS™ E6
Manufacturer Standard Lead Time
10-15
Detailed Description
晶体管: N-MOSFET; 单极; 600V; 20.2A; 151W; PG-TO247; CoolMOS™ E6
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 600V |
| Gate Charge | 63nC@10V |
| Continuous Drain Current | 20.2 A |
| Power | 151 W |
| On-Resistance | 190mΩ@9.5A,10V |
| Threshold Voltage | 3.5V@630μA |
| Input Capacitance | 1.4nF@100V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.3813 | |
| 10+ | $ 2.1417 | |
| 100+ | $ 2.1181 | |
| 500+ | $ 2.0930 | |
| 1000+ | $ 2.0679 |
Minimum:1/Multiple:1
Total amount: