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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPDD60R190G7XTMA1

Manufacturer

Infineon

Manufacturer Product Number

IPDD60R190G7XTMA1

Description

MOSFET HIGH POWER_NEW

Manufacturer Standard Lead Time

10-15

Detailed Description

MOSFET HIGH POWER_NEW

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55 ℃ ~ +150 ℃
Drain-Source Voltage	600V
Continuous Drain Current	13A
Threshold Voltage	3V
Type	MOSFET
On-Resistance	190mΩ
Power	76W
Gate Charge	18 nC

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 2,098

Quantity	Unit Price	Ext Price
1+	$ 6.0673
10+	$ 3.9465
100+	$ 2.7363
500+	$ 2.2183

Price For：Each

Minimum:1/Multiple:1

Total amount:

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MOSFET HIGH POWER_NEW

Infineon