Manufacturer
InfineonManufacturer Product Number
IPDQ60R010S7XTMA1
Description
MOSFET HIGH POWER_NEW
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Continuous Drain Current | 50A |
| Power | 694W |
| Gate Charge | 318nC@12V |
| On-Resistance | 10mΩ@50A,12V |
| Threshold Voltage | 4.5V@3.08mA |
| Input Capacitance | 11987pF@300V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|
Minimum:1/Multiple:1
Total amount: