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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD90R1K2C3

Manufacturer

Infineon

Manufacturer Product Number

IPD90R1K2C3

Description

场效应管(MOSFET) 83W 900V 5.1A 1个N沟道 TO-252-3

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 83W 900V 5.1A 1个N沟道 TO-252-3

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	N-Channel
Drain-Source Voltage	900V
Power	83W
Continuous Drain Current	5.1A
On-Resistance	1.2Ω@2.8A,10V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 74

Quantity	Unit Price	Ext Price
1+	$ 0.8996
100+	$ 0.7436
1250+	$ 0.6698
2500+	$ 0.6378

Price For：Each

Minimum:1/Multiple:1

Total amount:

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IPD95R2K0P7ATMA1

场效应管(MOSFET) 37W 950V 4A 1个N沟道 TO-252-3

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IPD95R2K0P7ATMA1

表面贴装 N 沟道 950V 4A（Tc） 37W（Tc） PG-TO252-3

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