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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD95R2K0P7ATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPD95R2K0P7ATMA1

Description

场效应管(MOSFET) 37W 950V 4A 1个N沟道 TO-252-3

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 37W 950V 4A 1个N沟道 TO-252-3

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Continuous Drain Current	4A
Operating Temperature	-55℃~150℃
Type	N-channel
Drain-Source Voltage	950V
Gate Charge	10nC@10V
Power	37W
Input Capacitance	330pF@400V
Threshold Voltage	3.5V@80µA
On-Resistance	2Ω@1.7A, 10V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,435

Quantity	Unit Price	Ext Price
1+	$ 0.6656
100+	$ 0.5501
1250+	$ 0.4944
2500+	$ 0.4707

Price For：Each

Minimum:1/Multiple:1

Total amount:

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IPD95R450P7ATMA1

表面贴装 N 沟道 950V 14A（Tc） 104W（Tc） PG-TO252-3

Infineon

IPD95R450P7ATMA1

LOW POWER_NEW

Infineon

IPD95R450P7ATMA1

表面贴装 N 沟道 950V 14A（Tc） 104W（Tc） PG-TO252-3

Infineon