Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD60R180P7SAUMA1
Manufacturer
InfineonManufacturer Product Number
IPD60R180P7SAUMA1
Description
Single N-Channel 600V 180 mOhm 25 nC CoolMOS� Power Mosfet - DPAK
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Continuous Drain Current | 18A |
| Power | 72W |
| Gate Charge | 25nC@10V |
| On-Resistance | 180mΩ @ 5.6A, 10V |
| Threshold Voltage | 4V @ 280µA |
| Input Capacitance | 1081pF@400V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 9,033
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.2490 | |
| 10+ | $ 1.4301 | |
| 100+ | $ 0.9622 | |
| 500+ | $ 0.7617 | |
| 1000+ | $ 0.6963 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPD60R1K0CEAUMA1
--
Infineon
IPD60R1K0CEAUMA1
Infineon CoolMOS CE 系列 N沟道 MOSFET IPD60R1K0CEAUMA1, 6.8 A, Vds=650 V, 3引脚 TO-252封装
Infineon
IPD60R1K0PFD7SAUMA1
MOSFET CONSUMER
Infineon
IPD60R1K4C6ATMA1
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPD60R1K4C6ATMA1, 3.2 A, Vds=650 V, 3引脚 TO-252封装
Infineon
