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IPD60R1K4C6ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD60R1K4C6ATMA1
Description
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPD60R1K4C6ATMA1, 3.2 A, Vds=650 V, 3引脚 TO-252封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Continuous Drain Current | 3.2A |
| Power | 28.4W |
| Threshold Voltage | 3.5V @ 90μA |
| Gate Charge | 9.4 nC @ 10 V |
| Input Capacitance | 200pF@100V |
| On-Resistance | 1.4Ω@1.1A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15,464
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6195 | |
| 10+ | $ 0.9831 | |
| 100+ | $ 0.6726 | |
| 500+ | $ 0.5361 | |
| 1000+ | $ 0.4874 | |
| 2500+ | $ 0.4108 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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Trans MOSFET N-CH 600V 5A T/R
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