Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD60R180P7ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD60R180P7ATMA1
Description
600V,18A, 180MOHM, dPAK
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Continuous Drain Current | 18A |
| Power | 72W |
| Gate Charge | 25nC@10V |
| On-Resistance | 180mΩ @ 5.6A, 10V |
| Threshold Voltage | 4V @ 280µA |
| Input Capacitance | 1081pF@400V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6,477
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.8088 | |
| 10+ | $ 1.8604 | |
| 100+ | $ 1.3160 | |
| 500+ | $ 1.0737 | |
| 1000+ | $ 1.0374 | |
| 2500+ | $ 0.9971 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPD60R180P7S
场效应管(MOSFET) IPD60R180P7S TO-252
Infineon
IPD60R180P7S
DISCRETE_MOSFET_POWER MOSFET
Infineon
IPD60R180P7SAUMA1
Single N-Channel 600V 180 mOhm 25 nC CoolMOS� Power Mosfet - DPAK
Infineon
IPD60R180P7SAUMA1
场效应管(MOSFET) 72W 600V 18A 1个N沟道 TO-252-3
Infineon
