Manufacturer
InfineonManufacturer Product Number
IPD30N06S2L13ATMA4
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
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| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Continuous Drain Current | 30 A |
| Drain-Source Voltage | 55V |
| Power | 136 W |
| Input Capacitance | 1800pF@25V |
| On-Resistance | 13mΩ@30A, 10V |
| Gate Charge | 69nC@10V |
| Threshold Voltage | 2V@80µA |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.6765 | |
| 10+ | $ 1.7142 | |
| 100+ | $ 1.1642 | |
| 500+ | $ 0.9288 | |
| 1000+ | $ 0.8536 |
Minimum:1/Multiple:1
Total amount:
IPD30N06S2L23ATMA3
Infineon OptiMOS 系列 Si N沟道 MOSFET IPD30N06S2L23ATMA3, 30 A, Vds=55 V, 3引脚 TO-252封装
Infineon