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IPD30N06S2L23ATMA3
Manufacturer
InfineonManufacturer Product Number
IPD30N06S2L23ATMA3
Description
Infineon OptiMOS 系列 Si N沟道 MOSFET IPD30N06S2L23ATMA3, 30 A, Vds=55 V, 3引脚 TO-252封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Gate Charge | 42 nC @ 10 V |
| Continuous Drain Current | 30 A |
| Drain-Source Voltage | 55V |
| Power | 100W |
| On-Resistance | 23mΩ@22A, 10V |
| Threshold Voltage | 2V@50µA |
| Input Capacitance | 1091pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10,020
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.2058 | |
| 10+ | $ 1.4037 | |
| 100+ | $ 0.9428 | |
| 500+ | $ 0.7464 | |
| 1000+ | $ 0.6823 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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