Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB072N15N3G
Manufacturer
InfineonManufacturer Product Number
IPB072N15N3G
Description
场效应管(MOSFET) 300W 150V 100A 1个N沟道 TO-263-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Power | 300W |
| Continuous Drain Current | 100A |
| Drain-Source Voltage | 150V |
| On-Resistance | 7.2mΩ@10V, 100A |
| Threshold Voltage | 4V@270μA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.5234 | |
| 100+ | $ 1.2797 | |
| 1000+ | $ 1.2254 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB072N15N3GATMA1
N-Channel 150 V 7.2 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-3
Infineon
IPB072N15N3GATMA1
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Infineon
IPB073N15N5
N-CH 150V 114A 7,3mOhm D2PAK
Infineon
IPB073N15N5ATMA1
表面贴装 N 沟道 150V 114A（Tc） 214W（Tc） PG-TO263-3-2
Infineon
