Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB073N15N5ATMA1
Manufacturer
InfineonManufacturer Product Number
IPB073N15N5ATMA1
Description
表面贴装 N 沟道 150V 114A（Tc） 214W（Tc） PG-TO263-3-2
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Gate Charge | 61 nC @ 10 V |
| Drain-Source Voltage | 150V |
| Power | 214 W |
| Continuous Drain Current | 114A |
| Threshold Voltage | 4.6V @ 160µA |
| Input Capacitance | 4700pF @ 75V |
| On-Resistance | 7.3mΩ@57A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.4995 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB081N06L3GATMA1
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
Infineon
IPB083N10N3GATMA1
N-Channel 100 V 8.2 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-3
Infineon
IPB090N06N3 G
MOSFET OptiMOS 3 PWR TRANST 60V 50A
Infineon
IPB090N06N3GATMA1
MOSFET N-CH 60V 50A D2PAK
Infineon
