Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB065N15N3GATMA1
Manufacturer
InfineonManufacturer Product Number
IPB065N15N3GATMA1
Description
Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS? Power Mosfet - D2PAK-7
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 130A |
| Gate Charge | 93nC@10V |
| Input Capacitance | 7300pF@75V |
| Threshold Voltage | 4V @ 270µA |
| On-Resistance | 6.5mΩ@100A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,007
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 7.8261 | |
| 10+ | $ 6.0033 | |
| 100+ | $ 4.8586 | |
| 500+ | $ 4.3420 | |
| 1000+ | $ 3.6749 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB072N15N3 G
DISCRETE_MOSFET_POWER MOSFET
Infineon
IPB072N15N3 G
绝缘栅场效应管（MOSFET）
Infineon
IPB072N15N3G
场效应管(MOSFET) 300W 150V 100A 1个N沟道 TO-263-3
Infineon
IPB072N15N3GATMA1
N-Channel 150 V 7.2 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-3
Infineon
