Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB038N12N3GATMA1
Manufacturer
InfineonManufacturer Product Number
IPB038N12N3GATMA1
Description
场效应管(MOSFET) 300W 120V 120A 1个N沟道 TO-263-3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Continuous Drain Current | 120 A |
| Drain-Source Voltage | 120 volt |
| Threshold Voltage | 4V @ 270µA |
| Gate Charge | 211nC@10V |
| Input Capacitance | 13800pF@60V |
| On-Resistance | 3.8mΩ@100A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 49
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.0761 | |
| 10+ | $ 2.6333 | |
| 30+ | $ 2.3687 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB039N10N3GATMA1
N-Channel 100 V 3.9 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-7
Infineon
IPB039N10N3GATMA1
N-Channel 100 V 3.9 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-7
Infineon
IPB042N10N3G
场效应管(MOSFET) 214W 100V 137A 1个N沟道 TO-263-2
Infineon
IPB042N10N3G
场效应管
Infineon
