Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB042N10N3G
Manufacturer
InfineonManufacturer Product Number
IPB042N10N3G
Description
场效应管
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 100 V |
| Power | 214 W |
| Continuous Drain Current | 137A |
| On-Resistance | 4.2mΩ@10V, 100A |
| Threshold Voltage | 3.5V@150μA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 33
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9010 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB042N10N3GATMA1
N-Channel 100 V 4.2 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-3
Infineon
IPB042N10N3GATMA1
Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
Infineon
IPB042N10N3GATMA1
场效应管(MOSFET) 214W 100V 100A 1个N沟道 TO-263-3
Infineon
IPB044N15N5ATMA1
表面贴装 N 沟道 150V 174A（Tc） 300W（Tc） PG-TO263-7
Infineon
