Manufacturer
InfineonManufacturer Product Number
IPB038N12N3 G
Description
DISCRETE_MOSFET_POWER MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
DISCRETE_MOSFET_POWER MOSFET
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-Channel |
| Power | 300W |
| Continuous Drain Current | 120 A |
| Drain-Source Voltage | 120 volt |
| On-Resistance | 3.8mΩ@100A,10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 12.3769 | |
| 5+ | $ 6.5213 | |
| 10+ | $ 5.7568 | |
| 30+ | $ 5.2457 | |
| 50+ | $ 5.1441 | |
| 60+ | $ 5.1176 | |
| 100+ | $ 5.0675 | |
| 200+ | $ 5.0285 |
Minimum:1/Multiple:1
Total amount: