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IPB026N10NF2SATMA1
Manufacturer
InfineonManufacturer Product Number
IPB026N10NF2SATMA1
Description
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low R DS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 250W |
| Drain-Source Voltage | 100 V |
| Gate Charge | 154nC@10V |
| Continuous Drain Current | 162A |
| Threshold Voltage | 3.8V@169µA |
| Input Capacitance | 7300pF@50V |
| On-Resistance | 2.65mΩ@100A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 50
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.2293 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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