Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB027N10N3 G
Manufacturer
InfineonManufacturer Product Number
IPB027N10N3 G
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-Channel |
| Power | 300W |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 120 A |
| On-Resistance | 2.7mΩ@100A,10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 4+ | $ 10.0277 | |
| 10+ | $ 5.5799 | |
| 30+ | $ 4.8126 | |
| 50+ | $ 4.3002 | |
| 60+ | $ 4.1985 | |
| 100+ | $ 4.1721 | |
| 200+ | $ 4.1205 | |
| 1000000+ | $ 4.0829 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPB027N10N3G(UMW)
--
UMW
IPB027N10N3GATMA1
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
Infineon
IPB027N10N3GATMA1
Single N-Channel 100 V 4.5 mOhm 206 nC 300 W OptiMOS SMT Mosfet - TO-263-3
Infineon
IPB027N10N5ATMA1
晶体管: N-MOSFET; 单极; 100V; 120A; 250W; PG-TO263-3; OptiMOS™ 5
Infineon
