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IPB026N06N
Manufacturer
InfineonManufacturer Product Number
IPB026N06N
Description
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB026N06N, 100 A, Vds=60 V, 3引脚 TO-263封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-Channel |
| Continuous Drain Current | 100A |
| Power | 136 W |
| On-Resistance | 2.3mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,060
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 5.9448 | |
| 10+ | $ 3.8643 | |
| 100+ | $ 2.8338 | |
| 500+ | $ 2.3924 | |
| 1000+ | $ 2.0610 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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MOSFET MV POWER MOS
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IPB026N06NATMA1
MOSFET MV POWER MOS
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IPB026N10NF2SATMA1
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IPB026N10NF2SATMA1
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low R DS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Infineon
