Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB024N08NF2SATMA1
Manufacturer
InfineonManufacturer Product Number
IPB024N08NF2SATMA1
Description
--
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 150W |
| Drain-Source Voltage | 80 V |
| Operating Temperature | -55℃ ~ +175℃ |
| Type | MOSFET |
| Threshold Voltage | 2.2V |
| On-Resistance | 2.4mΩ |
| Continuous Drain Current | 107A |
| Gate Charge | 89nC |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.0512 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB024N10N5ATMA1
表面贴装 N 沟道 100V 180A（Tc） 250W（Tc） PG-TO263-7
Infineon
IPB025N08N3 G
MOSFET OptiMOS 3 PWR TRANST 80V 120A
Infineon
IPB025N08N3GATMA1
N-Channel 80 V 120 A 2.5 mO 155 nC OptiMOS 3 Power Transistor - D2PAK
Infineon
IPB025N08N3GATMA1
N-Channel 80 V 120 A 2.5 mO 155 nC OptiMOS 3 Power Transistor - D2PAK
Infineon
