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IPB025N08N3GATMA1
Manufacturer
InfineonManufacturer Product Number
IPB025N08N3GATMA1
Description
N-Channel 80 V 120 A 2.5 mO 155 nC OptiMOS 3 Power Transistor - D2PAK
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Drain-Source Voltage | 80 V |
| Continuous Drain Current | 120 A |
| On-Resistance | 2.5mΩ@100A, 10V |
| Gate Charge | 206nC@10V |
| Threshold Voltage | 3.5V@270µA |
| Input Capacitance | 14200pF@40V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,169
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 10.5290 | |
| 10+ | $ 7.0170 | |
| 100+ | $ 5.0285 | |
| 500+ | $ 4.4269 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB025N10N3 G
MOSFET N-CH 100V 180A TO263-7
Infineon
IPB025N10N3G(TOKMAS)
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Tokmas
IPB025N10N3GATMA1
N-Channel 100 V 2.5 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-7
Infineon
IPB025N10N3GATMA1
N-Channel 100 V 2.5 mOhm OptiMOS�3 Power-Transistor - PG-TO-263-7
Infineon
