Manufacturer
InfineonManufacturer Product Number
IPB017N08N5ATMA1
Description
晶体管: N-MOSFET; 单极; 80V; 120A; 375W; PG-TO263-3; OptiMOS™ 5
Manufacturer Standard Lead Time
10-15
Detailed Description
晶体管: N-MOSFET; 单极; 80V; 120A; 375W; PG-TO263-3; OptiMOS™ 5
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 80 V |
| Power | 375W |
| Continuous Drain Current | 120 A |
| Gate Charge | 223 nC @ 10 V |
| Threshold Voltage | 3.8 V @ 280 µA |
| Input Capacitance | 16900 pF @ 40 V |
| On-Resistance | 1.7mΩ@100A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 12.9353 | |
| 10+ | $ 8.7118 | |
| 100+ | $ 6.3235 | |
| 500+ | $ 5.8292 |
Minimum:1/Multiple:1
Total amount: