Manufacturer
InfineonManufacturer Product Number
IPB017N10N5LFATMA1
Description
场效应管(MOSFET) 313W 100V 180A 1个N沟道 TO-263-7
Manufacturer Standard Lead Time
2-3
Detailed Description
场效应管(MOSFET) 313W 100V 180A 1个N沟道 TO-263-7
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 180A |
| Gate Charge | 195nC@10V |
| On-Resistance | 1.7mΩ@100A, 10V |
| Power | 313W |
| Threshold Voltage | 4.1V @ 270µA |
| Input Capacitance | 840pF @ 50V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.0815 | |
| 100+ | $ 3.6109 | |
| 1000+ | $ 3.4883 |
Minimum:1/Multiple:1
Total amount: