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BSZ0901NS
Manufacturer
InfineonManufacturer Product Number
BSZ0901NS
Description
场效应管(MOSFET) 69W 30V 145A 1个N沟道 TSDSON-8(3.3x3.3)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Gate Charge | 45nC@10V |
| Power | 2.1 W, 50 W |
| Continuous Drain Current | 22 A, 40 A |
| On-Resistance | 2mΩ@20A，10V |
| Input Capacitance | 2850pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,343
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4122 | |
| 100+ | $ 0.3259 | |
| 1250+ | $ 0.2883 | |
| 2500+ | $ 0.2702 | |
| 5000+ | $ 0.2548 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSZ0901NSIATMA1
晶体管: N-MOSFET; 单极; 30V; 40A; 69W; PG-TSDSON-8; OptiMOS™
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场效应管(MOSFET) 48W 30V 106A 1个N沟道 TSDSON-8(3.3x3.3)
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N-Channel 30 V 2.6 mOhm OptiMOSTM Power-Transistor - PG-TSDSON-8
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Infineon