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BSZ0901NSIATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ0901NSIATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 40A; 69W; PG-TSDSON-8; OptiMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Power | 2.1W, 69W |
| Gate Charge | 41nC @ 10V |
| Input Capacitance | 2.6nF@15V |
| On-Resistance | 2.1mΩ @ 20A, 10V |
| Continuous Drain Current | 25A,40A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 370
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7032 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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Infineon
BSZ0902NSIATMA1
晶体管: N-MOSFET; 单极; 30V; 40A; 48W; PG-TSDSON-8; OptiMOS™
Infineon