Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ065N03LSATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ065N03LSATMA1
Description
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2V@250μA |
| Gate Charge | 10nC@10V |
| On-Resistance | 6.5 mΩ @ 20 A, 10 V |
| Continuous Drain Current | 12A,40A |
| Input Capacitance | 670pF@15V |
| Power | 2.1W, 26W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,556
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2143 | |
| 10+ | $ 0.6378 | |
| 100+ | $ 0.4470 | |
| 500+ | $ 0.3648 | |
| 1000+ | $ 0.3286 | |
| 2500+ | $ 0.3161 | |
| 5000+ | $ 0.3147 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSZ065N06LS5ATMA1
60V 160A 9.4m? N-ch S3O8
Infineon
BSZ065N06LS5ATMA1
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g ) reduces switching losses without compro
Infineon
BSZ067N06LS3 G
--
Infineon
BSZ067N06LS3GATMA1
N-Channel 60 V 6.7 mOhm OptiMOSTM3 Power-MOSFET - PG-TSDSON-8
Infineon