Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ065N06LS5ATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ065N06LS5ATMA1
Description
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g ) reduces switching losses without compro
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Type | N-channel |
| Continuous Drain Current | 40 A |
| Gate Charge | 13nC@4.5V |
| Power | 46 W |
| On-Resistance | 6.5 mΩ @ 20 A, 10 V |
| Input Capacitance | 1800pF@30V |
| Threshold Voltage | 2.3V@20µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 677
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4665 | |
| 100+ | $ 0.3704 | |
| 1250+ | $ 0.3272 | |
| 2500+ | $ 0.3064 | |
| 5000+ | $ 0.2883 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSZ067N06LS3 G
--
Infineon
BSZ067N06LS3GATMA1
N-Channel 60 V 6.7 mOhm OptiMOSTM3 Power-MOSFET - PG-TSDSON-8
Infineon
BSZ068N06NS
原装正品
Infineon
BSZ068N06NSATMA1
N-Channel 60 V 6.8 mOhm OptiMOSTM Power-Transistor - PG-TSDSON-8
Infineon