Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSS806N H6327
Manufacturer
InfineonManufacturer Product Number
BSS806N H6327
Description
绝缘栅场效应管（MOSFET）
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 20V |
| Power | 500mW |
| Continuous Drain Current | 2.3A |
| On-Resistance | 41mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 86
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1072 | |
| 200+ | $ 0.0738 | |
| 1500+ | $ 0.0668 | |
| 3000+ | $ 0.0613 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSS806NEH6327
场效应管(MOSFET) 500mW 20V 2.3A 1个N沟道 SOT-23
Infineon
BSS806NEH6327XTSA1
MOSFET MOSFET SMALL SIGNAL N-CH
Infineon
BSS806NH6327
场效应管(MOSFET) BSS806NH6327 SOT-23
Infineon
BSS806NH6327-HXY
--
HUAXUANYANG