Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSS806NH6327
Manufacturer
InfineonManufacturer Product Number
BSS806NH6327
Description
场效应管(MOSFET) BSS806NH6327 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 20V |
| Power | 500mW |
| Continuous Drain Current | 2.3A |
| Threshold Voltage | 750mV@11μA |
| On-Resistance | 57mΩ@2.5V, 2.3A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 285
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1156 | |
| 50+ | $ 0.0919 | |
| 150+ | $ 0.0794 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSS806NH6327-HXY
--
HUAXUANYANG
BSS806NH6327XTSA1
N-Channel 20 V 2.3 A 57 mO 1.7 nC OptiMOS 2 Small Signal Transistor - SOT-23
Infineon
BSS806NH6327XTSA1
绝缘栅场效应管（MOSFET）
Infineon
BSS816NW-HXY
--
HUAXUANYANG